Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study
Time-dependent dielectric breakdown (TDDB) is one of the most important reliability issues in Cu/low-k technology development.With continuous Eyebrow Gel technology scalings to nanometer scales, TDDB issue is further exacerbated.In this paper, two failure mechanisms were investigated: the Ta ions migration model and the line-edge-roughness (LER) mo